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TK380P60Y

INCHANGE
Part Number TK380P60Y
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Dec 9, 2020
Detailed Description isc N-Channel MOSFET Transistor TK380P60Y ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.38Ω ·Easy to control...
Datasheet PDF File TK380P60Y PDF File

TK380P60Y
TK380P60Y

Overview
isc N-Channel MOSFET Transistor TK380P60Y ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.
38Ω ·Easy to control Gate switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous IDM Drain Current-Single Pulsed PD Total Dissipation @TC=25℃ Tj Operating Junction And Storage Temperature Tstg ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance 2 13 VALUE 600 ±30 9.
7 38.
8 80 -55~150 UNIT V V A A W ℃ MAX 1.
56 UNIT ℃/W ·ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BVDSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage CONDITIONS VGS=0V; ID= 10mA VDS=VGS; ID= 0.
36mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 4.
9A IGSS Gate-Source Leakage C...


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