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PBSS5330PAS

nexperia
Part Number PBSS5330PAS
Manufacturer nexperia
Description PNP transistor
Published Jul 21, 2019
Detailed Description PBSS5330PAS 30 V, 3 A PNP low VCEsat (BISS) transistor 11 September 2014 Product data sheet 1. General description PNP...
Datasheet PDF File PBSS5330PAS PDF File

PBSS5330PAS
PBSS5330PAS

Overview
PBSS5330PAS 30 V, 3 A PNP low VCEsat (BISS) transistor 11 September 2014 Product data sheet 1.
General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads.
NPN complement: PBSS4330PAS 2.
Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain (hFE) at high IC • High efficiency due to less heat generation • High temperature applications up to 175 °C • Reduced Printed-Circuit Board (PCB) area requirements • Leadless small SMD plastic package with soldarable side pads • Exposed heat sink for excellent thermal and electrical conductivity • Suitable for Automatic Optical Inspection (AOI) of solder joint • AEC-Q101 qualified 3.
Applications • Loadswitch • Battery-driven devices • Power management • ...


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