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PBSS5250TH

nexperia
Part Number PBSS5250TH
Manufacturer nexperia
Description PNP transistor
Published Jul 21, 2019
Detailed Description PBSS5250TH 50 V, 2 A PNP low VCEsat (BISS) transistor 9 August 2017 Product data sheet 1. General description PNP low ...
Datasheet PDF File PBSS5250TH PDF File

PBSS5250TH
PBSS5250TH

Overview
PBSS5250TH 50 V, 2 A PNP low VCEsat (BISS) transistor 9 August 2017 Product data sheet 1.
General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
2.
Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • High collector current gain (hFE) at high IC • Higher efficiency leading to less heat genereation • High temperature applications up to 175 °C • AEC-Q101 qualified 3.
Applications • Power management • DC-to-DC conversion • Supply line switches • Battery charger switches • Peripheral drivers • Driver in low supply voltage applications (e.
g.
lamps and LEDs) • Inductive load driver 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter VCEO collector-emitter voltage IC ICM RCEsat collector current peak collector current collector-emitter saturation resistance Conditions open base single pulse; tp...


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