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PBSS5250X


Part Number PBSS5250X
Manufacturer nexperia
Title PNP transistor
Description PNP low VCEsat transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4250X 2. Features and be...
Features and benefits
• Low collector-emitter saturation voltage VCEsat
• High collector current capability: IC and ICM
• Higher efficiency leading to less heat generation
• Reduced printed-circuit board requirements
• AEC-Q101 qualified 3. Applications
• Power management
• DC/DC converters
• Supply line sw...

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PBSS5250T : PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. −50 −2 −3 150 UNIT V A A mΩ 3 3 1 DESCRIPTION PNP BISS transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters. MARKING TYPE NUMBER PBSS5250T Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS5250T − DESCRIPTION plastic surface mounted package; 3 leads MARKING CODE(1) 3H* 1 Top view 2 2 MAM256 Fig.1 Simplified outline (SOT23) and symbol. VERSION SOT23 2003 Oct 09 2 Philips Semiconductors Product specification 50 V, 2 A PNP low VCEsat (BISS) transistor LIMITING VAL.

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PBSS5250X : NPN low VCEsat transistor in a SOT89 plastic package. NPN complement: PBSS4250X. MARKING TYPE NUMBER PBSS5250X Note 1. * = p : made in Hong Kong * = t : made in Malaysia * = W : made in China. *1L MARKING CODE(1) 1 Bottom view 2 3 handbook, halfpage PBSS5250X QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 emitter collector base DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. −50 −2 −5 160 UNIT V A A mΩ 2 3 1 MAM297 Fig.1 Simplified outline (SOT89) and symbol. 2003 Jun 17 2 Philips Semiconductors Objective specification 50 V, 2 A PNP low VCEsat (BISS) transistor LIMITING VALUES In accordance .




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