DatasheetsPDF.com

PSMN1R2-25YLC

nexperia
Part Number PSMN1R2-25YLC
Manufacturer nexperia
Description N-channel MOSFET
Published Jul 28, 2019
Detailed Description PSMN1R2-25YLC N-channel 25 V 1.3 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 1 — 2 May 2011 Produc...
Datasheet PDF File PSMN1R2-25YLC PDF File

PSMN1R2-25YLC
PSMN1R2-25YLC

Overview
PSMN1R2-25YLC N-channel 25 V 1.
3 mΩ logic level MOSFET in LFPAK using NextPower technology Rev.
1 — 2 May 2011 Product data sheet 1.
Product profile 1.
1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package.
This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.
2 Features and benefits „ High reliability Power SO8 package, qualified to 175°C „ Optimised for 4.
5V Gate drive utilising NextPower Superjunction technology „ Ultra low QG, QGD and QOSS for high system efficiencies at low and high loads „ Ultra low Rdson and low parasitic inductance 1.
3 Applications „ DC-to-DC converters „ Lithium-ion battery protection „ Load switching „ Power OR-ing „ Server power supplies „ Sync rectifier 1.
4 Quick reference data Table 1.
Symbol VDS ID Quick reference data Parameter drain-source voltage drain current Ptot total power dissipation Tj junction temperature Static characteristics RDSon drain-source on-state resistance Conditions 25 °C ≤ Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 VGS = 4.
5 V; ID = 25 A; Tj = 25 °C; see Figure 12 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12 Min [1] - -55 - - Typ Max Unit - 25 V - 100 A - 179 W - 175 °C 1.
35 1.
7 mΩ 1.
05 1.
3 mΩ Nexperia PSMN1R2-25YLC N-channel 25 V 1.
3 mΩ logic level MOSFET in LFPAK using NextPower Table 1.
Quick reference data …continued Symbol Parameter Conditions Dynamic characteristics QGD gate-drain charge VGS = 4.
5 V; ID = 25 A; VDS = 12 V; see Figure 14; see Figure 15 QG(tot) total gate charge VGS = 4.
5 V; ID = 25 A; VDS = 12 V; see Figure 15; see Figure 14 [1] Continuous current is limited by package.
2.
Pinning information Min Typ Max Unit - 8.
3 - nC - 31 - nC Table 2.
Pin 1 2 3 4 mb Pinning information Symbol Description S source S source S source G gate D mounting base; connected to drain 3.
Ordering information Simplified outline mb 1234 SOT669 (LFPAK;...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)