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PSMN1R2-25YL

NXP
Part Number PSMN1R2-25YL
Manufacturer NXP
Description N-channel 25 V 1.2 MOhm Logic Level MOSFET
Published Aug 9, 2009
Detailed Description PSMN1R2-25YL www.DataSheet4U.com N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK Rev. 01 — 25 June 2009 Product data ...
Datasheet PDF File PSMN1R2-25YL PDF File

PSMN1R2-25YL
PSMN1R2-25YL

Overview
PSMN1R2-25YL www.
DataSheet4U.
com N-channel 25 V 1.
2 mΩ logic level MOSFET in LFPAK Rev.
01 — 25 June 2009 Product data sheet 1.
Product profile 1.
1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 °C.
This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.
2 Features and benefits „ Advanced TrenchMOS provides low RDSon and low gate charge „ High efficiency gains in switching power converters „ Improved mechanical and thermal characteristics „ LFPAK provides maximum power density in a Power SO8 package 1.
3 Applications „ DC-to-DC converters „ Lithium-ion battery protection „ Load switching „ Motor control „ Server power supplies 1.
4 Quick reference data Table 1.
VDS ID Ptot Tj Quick reference Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 [1] Min -55 VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 25 V; RGS = 50 Ω; unclamped VGS = 4.
5 V; ID = 25 A; VDS = 12 V; see Figure 12; see Figure 13 Typ Max 25 100 121 150 677 Unit V A W °C mJ drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C drain current total power dissipation junction temperature Symbol Parameter Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge 11.
9 50.
6 nC nC NXP Semiconductors www.
DataSheet4U.
com PSMN1R2-25YL N-channel 25 V 1.
2 mΩ logic level MOSFET in LFPAK Quick reference …continued Conditions VGS = 10 V; ID = 15 A; Tj = 100 °C; see Figure 11 VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 10 Min Typ 0.
9 Max 1.
6 1.
2 Unit mΩ mΩ Table 1.
Symbol Parameter Static characteristics RDSon drain-source on-state resistance [1] Continuous current is limited by package.
2.
Pinning information Table 2.
Pin 1 2 3 4 mb S S S G D Pinning information Symbol Description source source source gate drain mbb076 Simplified outline Graphic symbol D G S 1 2 3 4 SOT1023 (LFPAK2) 3.
Ordering inf...


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