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PMDXB950UPE

nexperia
Part Number PMDXB950UPE
Manufacturer nexperia
Description dual P-channel MOSFET
Published Jul 28, 2019
Detailed Description PMDXB950UPE 20 V, dual P-channel Trench MOSFET 30 June 2015 Product data sheet 1. General description Dual P-channel e...
Datasheet PDF File PMDXB950UPE PDF File

PMDXB950UPE
PMDXB950UPE

Overview
PMDXB950UPE 20 V, dual P-channel Trench MOSFET 30 June 2015 Product data sheet 1.
General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits • Trench MOSFET technology • Leadless ultra small and ultra thin SMD plastic package: 1.
1 × 1.
0 × 0.
37 mm • Exposed drain pad for excellent thermal conduction • ElectroStatic Discharge (ESD) protection > 1 kV HBM • Drain-source on-state resistance RDSon = 1.
02 Ω 3.
Applications • Relay driver • High-speed line driver • High-side load switch • Switching circuits 4.
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