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PMDXB950UPE

NXP
Part Number PMDXB950UPE
Manufacturer NXP
Description dual P-channel Trench MOSFET
Published Nov 11, 2013
Detailed Description DF N1 0 PMDXB950UPE 10 September 2013 10B -6 20 V, dual P-channel Trench MOSFET Product data sheet 1. General descr...
Datasheet PDF File PMDXB950UPE PDF File

PMDXB950UPE
PMDXB950UPE

Overview
DF N1 0 PMDXB950UPE 10 September 2013 10B -6 20 V, dual P-channel Trench MOSFET Product data sheet 1.
General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits • • • • • Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.
1 × 1.
0 × 0.
37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 1.
02 Ω 3.
Applications • • • • Relay driver High-speed line driver High-side load switch Switching circuits 4.
Quick reference data Table 1.
Symbol Per transistor VDS VGS ID RDSon drain-source voltage gate-source voltage drain current VGS = -4.
5 V; Tamb = 25 °C VGS = -4.
5 V; ID = -500 mA; Tj = 25 °C [1] Quick reference data Parameter Conditions Tj = 25 °C Min -8 Typ Max -20 8 -500 Unit V V mA Stati...


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