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BUK9Y30-75B

nexperia
Part Number BUK9Y30-75B
Manufacturer nexperia
Description N-channel MOSFET
Published Jul 28, 2019
Detailed Description BUK9Y30-75B N-channel TrenchMOS logic level FET Rev. 04 — 10 April 2008 Product data sheet 1. Product profile 1.1 Gen...
Datasheet PDF File BUK9Y30-75B PDF File

BUK9Y30-75B
BUK9Y30-75B

Overview
BUK9Y30-75B N-channel TrenchMOS logic level FET Rev.
04 — 10 April 2008 Product data sheet 1.
Product profile 1.
1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.
2 Features and benefits „ Low conduction losses due to low on-state resistance „ Suitable for logic level gate drive sources „ Q101 compliant „ Suitable for thermally demanding environments due to 175 °C rating 1.
3 Applications „ 12 V, 24 V and 42 V loads „ General purpose power switching „ Automotive systems „ Motors, lamps and solenoids 1.
4 Quick reference data Table 1.
Symbol VDS ID Quick reference Parameter drain-source voltage drain current Ptot total power dissipation Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics QGD gate-drain charge Static chara...


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