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BUK9Y30-75B

NXP Semiconductors
Part Number BUK9Y30-75B
Manufacturer NXP Semiconductors
Description N-channel TrenchMOS logic level FET
Published Mar 27, 2010
Detailed Description www.DataSheet4U.com BUK9Y30-75B N-channel TrenchMOS™ logic level FET M3D748 Rev. 01 — 14 July 2004 Product data 1. P...
Datasheet PDF File BUK9Y30-75B PDF File

BUK9Y30-75B
BUK9Y30-75B

Overview
www.
DataSheet4U.
com BUK9Y30-75B N-channel TrenchMOS™ logic level FET M3D748 Rev.
01 — 14 July 2004 Product data 1.
Product profile 1.
1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
1.
2 Features s Very low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible.
1.
3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V, 24 V, and 42 V loads s General purpose power switching.
1.
4 Quick reference data s EDS(AL)S ≤ 89 mJ s ID ≤ 30 A s RDSon = 25 mΩ (typ) s Ptot ≤ 75 W.
2.
Pinning information Table 1: Pin 1,2,3 4 mb Pinning - SOT669 (LFPAK) simplified outline and symbol Description source (s) gate (g) mounting base, connected to drain (d) mb d Simplified outline Symbol g 1 2 3 4 MBL286 MBL798 s1 s2 s3 Top view SOT669 (LFPAK) Philips Semiconductors BUK9Y30-75B www.
DataSheet4U.
com N-channel TrenchMOS™ logic level FET 3.
O...


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