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FQU1N60C

ON Semiconductor
Part Number FQU1N60C
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Aug 16, 2019
Detailed Description FQD1N60C / FQU1N60C — N-Channel QFET® MOSFET www.onsemi.com FQD1N60C / FQU1N60C N-Channel QFET® MOSFET 600 V, 1.0 A, 1...
Datasheet PDF File FQU1N60C PDF File

FQU1N60C
FQU1N60C

Overview
FQD1N60C / FQU1N60C — N-Channel QFET® MOSFET www.
onsemi.
com FQD1N60C / FQU1N60C N-Channel QFET® MOSFET 600 V, 1.
0 A, 11.
5 Ω Features • 1 A, 600 V, RDS(on) = 11.
5 Ω (Max.
) @ VGS = 10 V, ID = 0.
5 A • Low Gate Charge (Typ.
4.
8 nC) • Low Crss (Typ.
3.
5 pF) • 100% Avalanche Tested • RoHS Compliant Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
D D G S D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) PD TJ, TSTG TL Power Dissipation (TA = 25°C)* Power Dissipation (TC = 25°C) - Derate Above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8’’ from Case for 5 Seconds FQD1N60CTM / FQU1N60CTU 600 1 0.
6 4 ± 30 33 1 2.
8 4.
5 2.
5 28 0.
22 -55 to +150 300 Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient (Minimum Pad of 2-oz Copper), Max.
Thermal Resistance, Junction-to-Ambient (*1 in2 Pad of 2-oz Copper), Max.
FQD1N60CTM / FQU1N60CTU 4.
53 110 50 Unit V A A A V mJ A mJ V/ns W W W/°C °C °C Unit °C/W Semiconductor Components Industries, LLC, 2017 May, 2017, Rev.
1.
5 1 Publication Order Number: FQD1N60C / FQU1N60C FQD1N60C / FQU1N60C — N-Channel QFET® MOSFET Package Marking and Ordering ...


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