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FQU1N60C

Fairchild Semiconductor
Part Number FQU1N60C
Manufacturer Fairchild Semiconductor
Description 600V N-Channel MOSFET
Published May 28, 2014
Detailed Description FQD1N60C / FQU1N60C N-Channel QFET® MOSFET April 2013 FQD1N60C / FQU1N60C N-Channel QFET® MOSFET 600 V, 1.0 A, 11.5 Ω ...
Datasheet PDF File FQU1N60C PDF File

FQU1N60C
FQU1N60C

Overview
FQD1N60C / FQU1N60C N-Channel QFET® MOSFET April 2013 FQD1N60C / FQU1N60C N-Channel QFET® MOSFET 600 V, 1.
0 A, 11.
5 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features • 1 A, 600 V, RDS(on) = 11.
5 Ω (Max.
) @ VGS = 10 V, ID = 0.
5 A • Low Gate Charge (Typ.
4.
8 nC) • Low Crss (Typ.
3.
5 pF) • 100% Avalanche Tested • RoHS Compliant D G S D-PAK G D S I-PAK G! D ! ● ◀▲ ● ● ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C)* Power Dissipation (TC = 25°C) - Derate above 25°C (Note 3) Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds FQD1N60C / FQU1N60C 600 1 0.
6 4 ± 30 33 1 2.
8 4.
5 2.
5 28 0.
22 -55 to +150 300 Unit V A A A V mJ A mJ V/ns W W W/°C °C °C Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case, Max.
RθJA Thermal Resistance, Junction-to-Ambient* RθJA Thermal Resistance, Junction-to-Ambient, Max.
* When mounted on the minimum pad size recommended (PCB Mount) ©2009 Fairchild Semiconductor Corporation FQD1N60C / FQU1N60C Rev.
C0 FQD1N60C / FQU1N60C 4.
53 50 110 Unit °C/W °C/W °C/W www.
fairchildsemi.
com FQD1N60C / FQU1N60C N-Channel QFET® MOSFET Electrical Cha...


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