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Si2301DS

TEMIC
Part Number Si2301DS
Manufacturer TEMIC
Description P-Channel MOSFET
Published Sep 15, 2019
Detailed Description P-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary VDS (V) –12 rDS(on) (W) 0.130 @ VGS = –4.5 V 0.190 @ VGS = –2.5 ...
Datasheet PDF File Si2301DS PDF File

Si2301DS
Si2301DS

Overview
P-Channel 1.
25-W, 2.
5-V Rated MOSFET Product Summary VDS (V) –12 rDS(on) (W) 0.
130 @ VGS = –4.
5 V 0.
190 @ VGS = –2.
5 V ID (A) –2.
3 –1.
9 Si2301DS TO-236 (SOT-23) G1 S2 3D Top View Si2301DS (A1)* *Marking Code Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C TA= 25_C TA= 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit –12 "8 –2.
3 –1.
5 –10 –1.
6 1.
25 0.
8 –55 to 150 Unit V A W _C Thermal Resistance Ratings Parameter Symbol ...


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