DatasheetsPDF.com

DN5564

Siliconix
Part Number DN5564
Manufacturer Siliconix
Description dual n-channel JFET
Published Sep 24, 2019
Detailed Description matched dual n-channel JFETs H Siliconix designed for • • • Performance Curves NCB-D See Sedion 4 • Wideband Differe...
Datasheet PDF File DN5564 PDF File

DN5564
DN5564

Overview
matched dual n-channel JFETs H Siliconix designed for • • • Performance Curves NCB-D See Sedion 4 • Wideband Differential Amplifiers • Commutators ABSOLUTE MAXIMUM RATINGS (25°C) Gate-Gate Voltage .
±80V Gate-Drain or Gate-Source Voltage •.
.
•••.
.
.
-40 V Gate Current •.
•••.
•.
••.
•.
•.
.
•.
••.
.
50 rnA Device Dissipation (Each Side), TA = 25°C (Derate 2.
2 mW/oC) .
.
•.
.
.
••.
.
•.
.
.
.
•.
•.
••.
• 325mW Total Device Dissipation, TA = 25°C (Derate 3.
3 mW/oC) •.
••.
.
•••••••.
•.
•.
•.
.
•.
650mW Storage Temperature Range •••.
•.
.
••.
.
.
.
• -65 to +200°C Lead Temperature (1/16" from case for 10 seconds) .
.
.
•.
300°C BENEFITS • High Gain 7500 tLmho Minimum gfs • Specified Matching Characteristics TO-71 See Section 6 ~~G, Gz S, 82 S2 G, 30 0' 02 06 20 0 7 G2 0, ,0 s, Bottom View .
4.
" ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) 1 1'2 I~ 14 5' S T A T 1 IGSS BVGSS VGS(off) VGS(I) 6" C lOSS 1" rOS(on) 8 91.
g- 10 'iT O V N A M 90.
Crss C1SS -i2 13 1 C NF ifn Characteristic Gate-Reverse Current Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Source Voltage Saturation Drain Current (Note 1) Static Drain Source ON Resistance Common-Source Forward Transconductance (Nol.
') Common-Source Output Conductance Common-Source Reverse Transfer Capacitance Common·Source Input Capacitance Spot NOise Figure Equivalent Short Circuit Input NOise Voltage Characteristics 14 -M IOSS1 IOSS2 Saturation Drain Current RaIla, (Nol.
' 1and 2) 15 TA IVGS1-VGS2 1 -C Differential Gate·Source Voltage 16 H 1 N AIVGS1-VGS2 1 AT Gate-5ource Voltage Oill.
r.
nlial 0,,11 (Nol.
3) -G 17 91.
1 91.
2 (TNroanI•s•co1nadnudct2a)nce RatiO DN6664 Min Max 0.
95 1 5 10 10 09S 1 Min -40 -D.
5 5 7500 7000 DN5666 Min Max 0.
95 1 10 25 25 0.
90 1 Max Unit -100 pA -200 nA -3 V 2 50 100 12,500 65 mA n /lmho 3 12 pF 1.
0 dB 50 nV v11z ON6666 Mm Max Unit 0.
9S 1 - 20 mV SO /IV! 50 ·C 0.
90 1 - Test Conditions VGS' -20 V, VOS= 0 IG=-l/1...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)