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BTA208X-1000B

WeEn
Part Number BTA208X-1000B
Manufacturer WeEn
Description 3Q Hi-Com Triac
Published Oct 3, 2019
Detailed Description BTA208X-1000B 3Q Hi-Com Triac 19 September 2018 Product data sheet 1. General description Planar passivated high commu...
Datasheet PDF File BTA208X-1000B PDF File

BTA208X-1000B
BTA208X-1000B


Overview
BTA208X-1000B 3Q Hi-Com Triac 19 September 2018 Product data sheet 1.
General description Planar passivated high commutation three quadrant triac in a SOT186A "full pack" plastic package intended for use in circuits where very high blocking voltage, high static and dynamic dV/dt and high dI/dt can occur.
This "series B" triac will commutate the full rated RMS current at the maximum rated junction temperature without the aid of a snubber.
2.
Features and benefits • 3Q technology for improved noise immunity • High commutation capability with maximum false trigger immunity • High immunity to false turn-on by dV/dt • Isolated mounting base package • Planar passivated for voltage ruggedness and reliability • Triggering in three quadrants only • Very high voltage capability 3.
Applications • Compressor starting controls • General purpose motor controls • Reversing induction motor controls e.
g.
vertical axis washing machines 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions VDRM repetitive peak offstate voltage IT(RMS) RMS on-state current full sine wave; Th ≤ 73 °C; Fig.
1; Fig.
2; Fig.
3 ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; state current tp = 20 ms; Fig.
4; Fig.
5 full sine wave; Tj(init) = 25 °C; tp = 16.
7 ms Tj junction temperature Static characteristics IGT gate trigger current VD = 12 V; IT = 0.
1 A; T2+ G+; Tj = 25 °C; Fig.
7 VD = 12 V; IT = 0.
1 A; T2+ G-; Tj = 25 °C; Fig.
7 Min Typ Max Unit - - 1000 V - - 8A - - 65 A - - 71 A - - 125 °C 2 18 50 mA 2 21 50 mA WeEn Semiconductors BTA208X-1000B 3Q Hi-Com Triac Symbol Parameter IH holding current VT on-state voltage Dynamic characteristics dVD/dt rate of rise of off-state voltage dIcom/dt rate of change of commutating current Conditions VD = 12 V; IT = 0.
1 A; T2- G-; Tj = 25 °C; Fig.
7 VD = 12 V; Tj = 25 °C; Fig.
9 IT = 10 A; Tj = 25 °C; Fig.
10 VDM = 670 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open cir...


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