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BTA208X-1000C

WeEn
Part Number BTA208X-1000C
Manufacturer WeEn
Description 3Q Hi-Com Triac
Published Oct 3, 2019
Detailed Description BTA208X-1000C 3Q Hi-Com Triac 19 September 2018 Product data sheet 1. General description Planar passivated high commu...
Datasheet PDF File BTA208X-1000C PDF File

BTA208X-1000C
BTA208X-1000C

Overview
BTA208X-1000C 3Q Hi-Com Triac 19 September 2018 Product data sheet 1.
General description Planar passivated high commutation three quadrant triac in a SOT186A "full pack" plastic package.
This triac is intended for use in motor control circuits where very high blocking voltage, high static and dynamic dV/dt as well as high dIcom/dt can occur.
This "series C" triac will commutate the full rated RMS current at the maximum rated junction temperature without the aid of a snubber.
2.
Features and benefits • 3Q technology for improved noise immunity • High commutation capability with maximum false trigger immunity • High immunity to false turn-on by dV/dt • Isolated mounting base package • Planar passivated for voltage ruggedness and reliability • Triggering in three quadrants only • Very high voltage capability 3.
Applications • Compressor starting controls • General purpose motor controls • Reversing induction motor control circuits e.
g.
vertical axis washing machines 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions VDRM repetitive peak offstate voltage IT(RMS) RMS on-state current full sine wave; Th ≤ 73 °C; Fig.
1; Fig.
2; Fig.
3 ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; state current tp = 20 ms; Fig.
4; Fig.
5 full sine wave; Tj(init) = 25 °C; tp = 16.
7 ms Tj junction temperature Static characteristics IGT gate trigger current VD = 12 V; IT = 0.
1 A; T2+ G+; Tj = 25 °C; Fig.
7 VD = 12 V; IT = 0.
1 A; T2+ G-; Tj = 25 °C; Fig.
7 Min Typ Max Unit - - 1000 V - - 8A - - 65 A - - 71 A - - 125 °C 2 6 35 mA 2 13 35 mA WeEn Semiconductors BTA208X-1000C 3Q Hi-Com Triac Symbol Parameter IH holding current VT on-state voltage Dynamic characteristics dVD/dt rate of rise of off-state voltage dIcom/dt rate of change of commutating current Conditions VD = 12 V; IT = 0.
1 A; T2- G-; Tj = 25 °C; Fig.
7 VD = 12 V; Tj = 25 °C; Fig.
9 IT = 10 A; Tj = 25 °C; Fig.
10 VDM = 670 V; Tj = 125 °C; (VDM = 67%...


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