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IXBH40N160

IXYS
Part Number IXBH40N160
Manufacturer IXYS
Description Monolithic Bipolar MOS Transistor
Published Oct 4, 2019
Detailed Description IXBH 40N160 High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode IC25 = 33 A VCES = 1...
Datasheet PDF File IXBH40N160 PDF File

IXBH40N160
IXBH40N160

Overview
IXBH 40N160 High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode IC25 = 33 A VCES = 1600 V VCE(sat) = 6.
2 V typ.
tfi = 40 ns C TO-247 AD G E G C E C (TAB) G = Gate, C = Collector, E = Emitter, TAB = Collector Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL Md Weight Symbol BVCES VGE(th) ICES IGES VCE(sat) Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient Maximum Ratings 1600 1600 V V ±20 V ±30 V TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 Ω VCE = 0.
8·VCES Clamped inductive load, L = 100 µH 33 20 40 ICM = 40 A A A A TC = 25°C 1.
6 mm (0.
063 in) from case for 10 s 350 -55 .
.
.
+150 150 -55 .
.
.
+150 300 W °C °C °C °C Mounting torque 1.
15/10 Nm/lb.
in.
6g Conditions IC = 1 mA, VGE = 0 V IC = 2 mA, VCE = VGE VCE = 0.
8·VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
16...


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