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IXBH40N140

IXYS Corporation
Part Number IXBH40N140
Manufacturer IXYS Corporation
Description (IXBH40N140 / IXBH40N160) High Voltage BIMOSFET Monolithic Bipolar MOS Transistor - N-Channel
Published Jan 10, 2007
Detailed Description www.DataSheet4U.com High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode IXBH 40N140 ...
Datasheet PDF File IXBH40N140 PDF File

IXBH40N140
IXBH40N140

Overview
www.
DataSheet4U.
com High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode IXBH 40N140 IXBH 40N160 VCES IC25 VCE(sat) tfi TO-247 AD = = = = 1400/1600 V 33 A 6.
2 V typ.
40 ns C G G C E E G = Gate, E = Emitter, C = Collector, TAB = Collector C (TAB) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL Md Weight Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C, TC = 90°C TC = 25°C, 1 ms Maximum Ratings 40N140 40N160 1400 1400 1600 1600 ±20 ±30 33 20 40 ICM = 40 350 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A A W °C °C °C °C Features • International standard package JEDEC TO-247 AD • High Voltage BIMOSFETTM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective RDS(on) • Monolithic construction - high blocking voltage capability - very fast turn-off characteristics • MOS Gate turn-on - drive simplicity • Intrinsic diode Applications • • • • • AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies • CRT deflection • Lamp ballasts Advantages VGE = 15 V, TVJ = 125°C, RG = 22 W VCE = 0.
8•VCES Clamped inductive load, L = 100 mH TC = 25°C 1.
6 mm (0.
063 in) from case for 10 s Mounting torque 300 1.
15/10 Nm/lb.
in.
6 g Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
40N140 40N160 1400 1600 4 TJ = 25°C TJ = 125°C 8 400 3 ± 500 6.
2 TJ = 125°C 7.
1 7.
8 V V V mA mA nA V V BVCES VGE(th) ICES IGES VCE(sat) IC IC = 1 mA, VGE = 0 V = 2 mA, VCE = VGE • Easy to mount with 1 screw (isolated mounting screw hole) • Space savings • High power density VCE = 0.
8 • VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved 1-4 031 IXBH 40N140 IXBH 40N160 Symbol Conditions Characteristic Values (TJ = 25°C, unle...


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