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10N60M2

STMicroelectronics
Part Number 10N60M2
Manufacturer STMicroelectronics
Description N-channel Power MOSFET
Published Oct 22, 2019
Detailed Description STFH10N60M2 N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh™ M2 Power MOSFET in a TO-220FP wide creepage package Datasheet -...
Datasheet PDF File 10N60M2 PDF File

10N60M2
10N60M2

Overview
STFH10N60M2 N-channel 600 V, 0.
55 Ω typ.
, 7.
5 A MDmesh™ M2 Power MOSFET in a TO-220FP wide creepage package Datasheet - production data Figure 1: Internal schematic diagram D(2) G(1) Features Order code STFH10N60M2 VDS @ TJmax 650 V RDS(on) max 0.
60 Ω ID 7.
5 A  Extremely low gate charge  Excellent output capacitance (COSS) profile  100% avalanche tested  Zener-protected  Wide distance of 4.
25 mm between the pins Applications  Switching applications  LLC converters, resonant converters Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
The TO-220FP wide creepage package provides increased surface insulation for Power MOSFETs to prevent failure due to arcing, which can occur in polluted environments.
Order code STFH10N60M2 S(3) AM15572v1_no_tab Table 1: Device summary Marking Package 10N60M2 TO-220FP wide creepage Packing Tube May 2017 DocID029418 Rev 4 This is information on a product in full production.
1/12 www.
st.
com Contents Contents STFH10N60M2 1 Electrical ratings .
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3 2 Electrical characteristics .
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4 2.
1 Electrical characteristics (curves).
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6 3 Test circuits 8 4 Package information .
9 4.
1 TO-220FP wide creepage package information .
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9 5 Revision history .
11 2/12 DocID029418 Rev 4 STFH10N60M2 Electrical ratings 1 Electrical ...


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