DatasheetsPDF.com

10N60B

Fairchild Semiconductor
Part Number 10N60B
Manufacturer Fairchild Semiconductor
Description 600V N-Channel MOSFET
Published Aug 19, 2008
Detailed Description SSH10N60B November 2001 SSH10N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power fie...
Datasheet PDF File 10N60B PDF File

10N60B
10N60B

Overview
SSH10N60B November 2001 SSH10N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.
DataSheet4U.
com planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supplies.
Features • • • • • • 10A, 600V, RDS(on) = 0.
8Ω @VGS = 10 V Low gate charge ( typical 54 nC) Low Crss ( typical 32 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! TO-3P G DS SSH Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) SSH10N60B 600 ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)