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10N60A

Fairchild Semiconductor
Part Number 10N60A
Manufacturer Fairchild Semiconductor
Description Advanced Power MOSFET
Published Feb 25, 2008
Detailed Description www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input...
Datasheet PDF File 10N60A PDF File

10N60A
10N60A

Overview
www.
DataSheet4U.
com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.
) @ VDS = 600V Low RDS(ON) : 0.
646 Ω (Typ.
) SSP10N60A BVDSS = 600 V RDS(on) = 0.
8 Ω ID = 9 A TO-220 1 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 oC) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25oC) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp.
for Soldering Purposes, 1/8 “ from case for 5-seconds 1 O o Value 600 9 5.
7 36 + _ 30 442 9 15.
6 3.
0 156 1.
25 - 55 to +150 Units V A A V mJ A mJ V/ns W W/ C o O 1 O 1 O 3 O 2 o C 300 Thermal Resistance Symbol R R θJC θCS Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ.
-0.
5 -- Max.
0.
8 -62.
5 Units o C /W R θJA Rev.
B ©1999 Fairchild Semiconductor Corporation www.
DataSheet4U.
com SSP10N60A Symbol BVDSS ∆BV/ ∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coeff.
Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain( “Miller” ) Charge Min.
Typ.
Max.
Units 600 -2.
0 -----------------0.
66 ------7.
57 190 78 20 23 85 30 74 12 35.
4 --4.
0 100 -100 25 250 0.
8 -220 90 50 55 180 70 95 --nC ns µA Ω Ω pF V V nA N-CHANNEL POWER MOSFET Electrical ...


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