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2N6032

VPT
Part Number 2N6032
Manufacturer VPT
Description NPN High Power Silicon Transistor
Published Oct 28, 2019
Detailed Description 2N6032, 2N6033 NPN High Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/528 • TO-3...
Datasheet PDF File 2N6032 PDF File

2N6032
2N6032

Overview
2N6032, 2N6033 NPN High Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/528 • TO-3 (TO-204AA) Package Rev.
V1 Electrical Characteristics Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Emitter Breakdown Voltage Collector - Emitter Breakdown Voltage Collector - Base Cutoff Current Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current On Characteristics1 Test Conditions Symbol Units Min.
IC = 200 mAdc, 2N6032 IC = 50 mAdc, 2N6033 IC = 200 mAdc, Both V(BR)CEO Vdc V(BR)CER Vdc IC = 200 mAdc, Both V(BR)CEX Vdc VCB = 120 Vdc, 2N6032 VCB = 150 Vdc, 2N6033 ICBO mAdc VEB = 7.
0 Vdc IEBO mAdc VCE = 110 Vdc, VBE = -1.
5 Vdc, 2N6032 VCE = 135 Vdc, VBE = -1.
5 Vdc, 2N6033 ICEX µAdc VCE = 80 Vdc, Both ICEO mAdc 90 120 110 140 120 150 — — — — Max.
— — — 25 25 10 250 250 10 Forward Current Transfer Ratio IC = 50 Adc, VCE = 2.
6 Vdc 2N6032 IC = 40 Adc, VCE = 2.
0 Vdc 2N603...


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