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2N6675

Part Number	2N6675
Manufacturer	VPT
Description	NPN High Power Silicon Transistor
Published	Oct 28, 2019
Detailed Description	2N6674 & 2N6675 NPN High Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/537 • TO-...
Datasheet	2N6675 PDF File

Overview

2N6674 & 2N6675 NPN High Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/537 • TO-3 (TO-204AA) Package • Designed for High Voltage, High Speed Switching Applications • Ideal for Regulators, Inverters and Deflection Circuits Rev.
V3 Electrical Characteristics (TA = +25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min.
Max.
Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Emitter - Base Cutoff Current Collector - Base Cutoff Current IC = 200 mA dc 2N6674 2N6675 V(BR)CEO Vdc 300 400 VCE = 450 Vdc; VBE = -1.
5 V dc, 2N6674 VCE = 650 Vdc; VBE = -1.
5 V dc, 2N6675 ICEX1 mA dc — VEB = 7 V dc VCB = 450 V d...

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