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FQI5N60C

ON Semiconductor
Part Number FQI5N60C
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Nov 15, 2019
Detailed Description FQI5N60C — N-Channel QFET® MOSFET FQI5N60C N-Channel QFET® MOSFET 600 V, 4.5 A, 2.5 Ω Features • 4.5 A, 600 V, RDS(on) ...
Datasheet PDF File FQI5N60C PDF File

FQI5N60C
FQI5N60C

Overview
FQI5N60C — N-Channel QFET® MOSFET FQI5N60C N-Channel QFET® MOSFET 600 V, 4.
5 A, 2.
5 Ω Features • 4.
5 A, 600 V, RDS(on) = 2.
5 Ω (Max.
) @VGS = 10 V, ID = 2.
1 A • Low Gate Charge (Typ.
15 nC) • Low Crss (Typ.
6.
5 pF) • 100% Avalanche Tested Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
D GDS I2-PAK G Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Curr...


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