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FQI5N60C

Fairchild Semiconductor
Part Number FQI5N60C
Manufacturer Fairchild Semiconductor
Description 600V N-channel MOSFET
Published Oct 12, 2010
Detailed Description FQI5N60C — N-Channel QFET® MOSFET FQI5N60C N-Channel QFET® MOSFET 600 V, 4.5 A, 2.5 Ω November 2013 Features • 4.5 A,...
Datasheet PDF File FQI5N60C PDF File

FQI5N60C
FQI5N60C

Overview
FQI5N60C — N-Channel QFET® MOSFET FQI5N60C N-Channel QFET® MOSFET 600 V, 4.
5 A, 2.
5 Ω November 2013 Features • 4.
5 A, 600 V, RDS(on) = 2.
5 Ω (Max.
) @VGS = 10 V, ID = 2.
1 A • Low Gate Charge (Typ.
15 nC) • Low Crss (Typ.
6.
5 pF) • 100% Avalanche Tested Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
D GDS I2-PAK G Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche...


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