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IRF9Z22

Vishay Siliconix
Part Number IRF9Z22
Manufacturer Vishay Siliconix
Description Power MOSFET
Published Oct 13, 2010
Detailed Description IRF9Z22, SiHF9Z22 www.DataSheet4U.com Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) ...
Datasheet PDF File IRF9Z22 PDF File

IRF9Z22
IRF9Z22

Overview
IRF9Z22, SiHF9Z22 www.
DataSheet4U.
com Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration VGS = - 10 V 26 6.
2 8.
6 Single S FEATURES - 50 0.
33 • • • • • • • P-Channel Versatility Compact Plastic Package Fast Switching Low Drive Current Ease of Paralleling Excellent Temperature Stability Lead (Pb)-free Available Available RoHS* COMPLIANT TO-220 G DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors.
The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness.
The P-Channel Power MOSFET’s are designed for application which require the convenience of reverse polarity operation.
They retain all of the features of the more common N-Channel Power MOSFET’s such as voltage control, very fast switching, ease of paralleling, and excellent temperature stability.
P-Channel Power MOSFETs are intended for use in power stages where complementary symmetry with N-Channel devices offers circuit simplification.
They are also very useful in drive stages because of the circuit versatility offered by the reverse polarity connection.
Applications include motor control, audio amplifiers, switched mode converters, control circuits and pulse amplifiers.
S G D D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 IRF9Z22PbF SiHF9Z22-E3 IRF9Z22 SiHF9Z22 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Drain-Gate Voltage (RGS = 20 KΩ) Continuous Drain Current VGS at - 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS VGDR ID LIMIT - 50 ± 20 - 50 - 8.
9 - 5.
6 - 36 0.
32 - 36 - 2.
2 40 - 55 to + 150 300d UNIT V A W/°C A A W °C IDM Pulsed Drain Currenta Linear Derating Factor Inductive Current, Clamped L = 100 µH ILM Unclamped Inductive Current (Avalanche Current) IL PD Maximum Power Dissip...


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