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FCH190N65F

ON Semiconductor
Part Number FCH190N65F
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Jan 17, 2020
Detailed Description FCH190N65F — N-Channel SuperFET® II FRFET® MOSFET FCH190N65F N-Channel SuperFET® II FRFET® MOSFET 650 V, 20.6 A, 190 mΩ...
Datasheet PDF File FCH190N65F PDF File

FCH190N65F
FCH190N65F

Overview
FCH190N65F — N-Channel SuperFET® II FRFET® MOSFET FCH190N65F N-Channel SuperFET® II FRFET® MOSFET 650 V, 20.
6 A, 190 mΩ Features • 700 V @ TJ = 150°C • Typ.
RDS(on) = 168 mΩ • Ultra Low Gate Charge (Typ.
Qg = 60 nC) • Low Effective Output Capacitance (Typ.
Coss(eff.
) = 304 pF) • 100% Avalanche Tested • RoHS Compliant Applications • LCD / LED / PDP TV • Telecom / Server Power Supplies • Solar Inverter • AC - DC Power Supply Description SuperFET® II MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.
This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.
Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
D G DS TO-247 long leads G Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - DC - AC - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy MOSFET dv/dt Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate Above 25oC TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
S (f > 1 Hz) (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) FCH190N65F-F155 650 ±20 ±30 20.
6 13.
1 61.
8 400 4.
0 2.
1 100 50 208 1.
67 -55 to +150 300 ...


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