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STD3NK60ZT4

STMicroelectronics
Part Number STD3NK60ZT4
Manufacturer STMicroelectronics
Description N-CHANNEL Power MOSFET
Published Jan 29, 2020
Detailed Description STB3NK60ZT4, STD3NK60Z-1, STD3NK60ZT4 STP3NK60Z, STP3NK60ZFP Datasheet N-channel 600 V, 3.2 Ω typ., 2.4 A SuperMESH™ Pow...
Datasheet PDF File STD3NK60ZT4 PDF File

STD3NK60ZT4
STD3NK60ZT4

Overview
STB3NK60ZT4, STD3NK60Z-1, STD3NK60ZT4 STP3NK60Z, STP3NK60ZFP Datasheet N-channel 600 V, 3.
2 Ω typ.
, 2.
4 A SuperMESH™ Power MOSFETs in D²PAK, IPAK, DPAK, TO-220 and TO-220FP packages TAB 13 D2PAK TAB TAB TAB 23 1 DPAK IPAK 3 12 1 23 TO-220 123 TO-220FP D(2, TAB) G(1) Features Order codes VDS RDS(on) max.
STB3NK60ZT4 STD3NK60Z-1 STD3NK60ZT4 600 V 3.
6 Ω STP3NK60Z STP3NK60ZFP • Extremely high dv/dt capability • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected ID 2.
4 A Package D2PAK IPAK DPAK TO-220 TO-220FP Applications S(3) AM01475V1 • Switching applications Product status link STB3NK60ZT4 STD3NK60Z-1 STD3NK60ZT4 STP3NK60Z STP3NK60ZFP Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™.
In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.
DS2912 - Rev 6 - August 2018 For further information contact your local STMicroelectronics sales office.
www.
st.
com STB3NK60ZT4,STD3NK60Z-1,STD3NK60ZT4,STP3NK60Z,STP3NK60ZFP Electrical ratings 1 Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter D2PAK, TO-220 VDS Drain-source voltage VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C 2.
4 ID Drain current (continuous) at TC = 100 °C 1.
51 IDM (2) Drain current (pulsed) 9.
6 PTOT Total dissipation at TC = 25 °C 45 ESD Gate-source human body model (R = 1.
5 kΩ, C = 100 pF) VISO Insulation withstand voltage (RMS) from all three leads to external heat-sink (t = 1 s, TC = 25 °C) dv/dt (3) Peak diode recovery voltage slope Tj Operating junction temperature range Tstg Storage temperature range 1.
Limited by maximum junction temperature.
2.
Pulse width limited by safe operating area.
3.
ISD ≤ 2.
4 A, di/dt ≤ ...


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