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STD3NK60Z

ST Microelectronics
Part Number STD3NK60Z
Manufacturer ST Microelectronics
Description N-CHANNEL Power MOSFET
Published Mar 29, 2007
Detailed Description STP3NK60Z - STP3NK60ZFP STB3NK60Z-STD3NK60Z-STD3NK60Z-1 N-CHANNEL 600V - 3.3Ω - 2.4A TO-220/FP/D2PAK/DPAK/IPAK Zener-Pro...
Datasheet PDF File STD3NK60Z PDF File

STD3NK60Z
STD3NK60Z

Overview
STP3NK60Z - STP3NK60ZFP STB3NK60Z-STD3NK60Z-STD3NK60Z-1 N-CHANNEL 600V - 3.
3Ω - 2.
4A TO-220/FP/D2PAK/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE STP3NK60Z STP3NK60ZFP STB3NK60Z STD3NK60Z STD3NK60Z-1 s s s s s s VDSS 600 600 600 600 600 V V V V V RDS(on) < 3.
6 < 3.
6 < 3.
6 < 3.
6 < 3.
6 Ω Ω Ω Ω Ω ID 2.
4 A 2.
4 A 2.
4 A 2.
4 A 2.
4 A Pw 45 W 20 W 45 W 45 W 45 W 1 3 2 TYPICAL RDS(on) = 3.
3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-220 1 3 TO-220FP D2PAK 3 1 1 3 2 DPAK IPAK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.
In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC s LIGHTING s ORDERING INFORMATION SALES TYPE STP3NK60Z STP3NK60ZFP STB3NK60ZT4 STD3NK60Z-1 STD3NK60ZT4 July 2003 MARKING P3NK60Z P3NK60ZFP B3NK60Z D3NK60Z D3NK60Z PACKAGE TO-220 TO-220FP D2PAK IPAK DPAK PACKAGING TUBE TUBE TAPE & REEL TUBE TAPE & REEL 1/15 STP3NK60Z /FP - STB3NK60Z - STD3NK60Z - STD3NK60Z-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter STP3NK60Z STB3NK60Z Value STP3NK60ZFP STD3NK60Z STD3NK60Z-1 Unit VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) VISO Tj Tstg Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.
5KΩ) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperatu...


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