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BUK662R5-30C

nexperia
Part Number BUK662R5-30C
Manufacturer nexperia
Description N-channel TrenchMOS intermediate level FET
Published Feb 27, 2020
Detailed Description BUK662R5-30C N-channel TrenchMOS intermediate level FET Rev. 2 — 14 October 2010 Product data sheet 1. Product profi...
Datasheet PDF File BUK662R5-30C PDF File

BUK662R5-30C
BUK662R5-30C

Overview
BUK662R5-30C N-channel TrenchMOS intermediate level FET Rev.
2 — 14 October 2010 Product data sheet 1.
Product profile 1.
1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.
1.
2 Features and benefits „ AEC Q101 compliant „ Suitable for intermediate level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.
3 Applications „ 12 V Automotive systems „ Electric and electro-hydraulic power steering „ Motors, lamps and solenoid control „ Start-Stop micro-hybrid applications „ Transmission control „ Ultra high performance power switching 1.
4 Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions VDS drain-source Tj ≥ 25 °C; Tj ≤ 175 °C voltage ID drain current VGS = 10...


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