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BUK662R5-30C

NXP
Part Number BUK662R5-30C
Manufacturer NXP
Description N-channel TrenchMOS intermediate level FET
Published Feb 27, 2016
Detailed Description BUK662R5-30C N-channel TrenchMOS intermediate level FET Rev. 2 — 14 October 2010 Product data sheet 1. Product profi...
Datasheet PDF File BUK662R5-30C PDF File

BUK662R5-30C
BUK662R5-30C


Overview
BUK662R5-30C N-channel TrenchMOS intermediate level FET Rev.
2 — 14 October 2010 Product data sheet 1.
Product profile 1.
1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.
1.
2 Features and benefits „ AEC Q101 compliant „ Suitable for intermediate level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.
3 Applications „ 12 V Automotive systems „ Electric and electro-hydraulic power steering „ Motors, lamps and solenoid control „ Start-Stop micro-hybrid applications „ Transmission control „ Ultra high performance power switching 1.
4 Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions VDS drain-source Tj ≥ 25 °C; Tj ≤ 175 °C voltage ID drain current VGS = 10 V; Tmb = 25 °C; see Figure 1 Ptot total power Tmb = 25 °C; see Figure 2 dissipation Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11 Min Typ Max Unit - - 30 V [1] - - 100 A - - 204 W - 2.
4 2.
8 mΩ NXP Semiconductors BUK662R5-30C N-channel TrenchMOS intermediate level FET Table 1.
Quick reference data …continued Symbol Parameter Conditions Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics ID = 100 A; Vsup ≤ 30 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped QGD gate-drain charge ID = 25 A; VDS = 24 V; VGS = 10 V; see Figure 13; see Figure 14 [1] Continuous current is limited by package.
2.
Pinning information Min Typ Max Unit - - 501 mJ - 33.
3 - nC Table 2.
Pin 1 2 3 mb Pinning information Symbol Description G gate D drain S source D mounting base; connected to drain Simplified outline mb 2 13 SOT404 (D2PAK) 3.
Ordering information Graphic...


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