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BUJD203A

WeEn
Part Number BUJD203A
Manufacturer WeEn
Description NPN power transistor
Published Mar 5, 2020
Detailed Description BUJD203A NPN power transistor with integrated diode 9 October 2018 Product data sheet 1. General description High volt...
Datasheet PDF File BUJD203A PDF File

BUJD203A
BUJD203A

Overview
BUJD203A NPN power transistor with integrated diode 9 October 2018 Product data sheet 1.
General description High voltage, high speed, planar passivated NPN power switching transistor with integrated antiparallel E-C diode in a SOT78 (TO220AB) plastic package.
2.
Features and benefits • Fast switching • High voltage capability • Integrated anti-parallel E-C diode • Very low switching and conduction losses 3.
Applications • DC-to-DC converters • Electronic lighting ballasts • Inverters • Motor control systems 4.
Pinning information Table 1.
Pinning information Pin Symbol Description Simplified outline 1 B base mb 2 C collector 3 E emitter mb C mounting base; connected to collector Graphic symbol C B E sym131 123 TO-220AB (SOT78) WeEn Semiconductors BUJD203A NPN power transistor with integrated diode 5.
Ordering information Table 2.
Ordering information Type number Package Name BUJD203A TO-220AB Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78 BUJD203A Product data sheet All information provided in this document is subject to legal disclaimers.
9 October 2018 © WeEn Semiconductors Co.
, Ltd.
2018.
All rights reserved 2 / 13 WeEn Semiconductors BUJD203A NPN power transistor with integrated diode 6.
Limiting values Table 3.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions VCESM collector-emitter peak voltage VBE = 0 V VCBO collector-base voltage IE = 0 A VCEO collector-emitter voltage IB = 0 A IC collector current DC; Fig.
1; Fig.
2; Fig.
3 ICM peak collector current Fig.
1; Fig.
2; Fig.
3 IB base current DC IBM peak base current Ptot total power dissipation Tmb ≤ 25 °C; Fig.
4 Tstg storage temperature Tj junction temperature Min Max Unit - 850 V - 850 V - 425 V - 4A - 8A - 2A - 4A - 80 W -65 150 °C - 150 °C 10 IC (A) 8 6 001aac000 IBon VBB VCC LC VCL(CE) probe point LB DUT 001aab999 4 2 0 0...


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