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BUJD203AD


Part Number BUJD203AD
Manufacturer NXP
Title NPN power transistor
Description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-moun...
Features and benefits „ Fast switching „ High voltage capability „ Integrated anti-parallel E-C diode „ Surface-mountable package „ Very low switching and conduction losses 1.3 Applications „ DC-to-DC converters „ Electronic lighting ballasts „ Inverters „ Motor control systems 1.4 Quick reference data ...

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BUJD203A : High voltage, high speed, planar passivated NPN power switching transistor with integrated antiparallel E-C diode in a SOT78 (TO220AB) plastic package. 2. Features and benefits • Fast switching • High voltage capability • Integrated anti-parallel E-C diode • Very low switching and conduction losses 3. Applications • DC-to-DC converters • Electronic lighting ballasts • Inverters • Motor control systems 4. Pinning information Table 1. Pinning information Pin Symbol Description Simplified outline 1 B base mb 2 C collector 3 E emitter mb C mounting base; connected to collector Graphic symbol C B E sym131 123 TO-220AB (SOT78) WeEn Semiconductors BUJD203A NPN power transistor wit.

BUJD203A : High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT78 (TO220AB) plastic package. 1.2 Features and benefits  Fast switching  High voltage capability  Integrated anti-parallel E-C diode  Very low switching and conduction losses 1.3 Applications  DC-to-DC converters  Electronic lighting ballasts  Inverters  Motor control systems 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions IC collector current see Figure 1; see Figure 2; DC; see Figure 4 Ptot total power see Figure 3; Tmb ≤ 25 °C dissipation VCESM collector-emitter VBE = 0 V peak voltage Static characteristics h.

BUJD203AD : High voltage, high speed, planar passivated NPN power switching transistor with integrated antiparallel E-C diode in a SOT428 (DPAK) surface-mountable plastic package. 2. Features and benefits • Fast switching • High voltage capability • Integrated anti-parallel E-C diode • Surface mountable package • Very low switching and conduction losses 3. Applications • DC-to-DC converters • Electronic lighting ballasts • Inverters • Motor control systems 4. Pinning information Table 1. Pinning information Pin Symbol Description Simplified outline 1 B base 2 C collector[1] 3 E emitter mb C mounting base; connected to collector Graphic symbol C B E sym131 DPAK (SOT428) [1] it is not.

BUJD203AX : High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT186A (TO220F) full pack plastic package. 1.2 Features and benefits „ Fast switching „ High voltage capability „ Integrated anti-parallel E-C diode „ Isolated package „ Very low switching and conduction losses 1.3 Applications „ DC-to-DC converters „ Electronic lighting ballasts „ Inverters „ Motor control systems 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions IC collector current see Figure 1; see Figure 2; DC; see Figure 4 Ptot total power Th ≤ 25 °C; see Figure 3 dissipation VCESM collector-emitter peak voltage VBE = 0 V .




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