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FDS6930A

Fairchild Semiconductor
Part Number FDS6930A
Manufacturer Fairchild Semiconductor
Description Dual N-Channel MOSFET
Published Mar 30, 2005
Detailed Description October 1998 FDS6930A Dual N-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features 5.5 A, 30 V. RDS(O...
Datasheet PDF File FDS6930A PDF File

FDS6930A
FDS6930A

Overview
October 1998 FDS6930A Dual N-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features 5.
5 A, 30 V.
RDS(ON) = 0.
040 Ω @ VGS = 10 V RDS(ON) = 0.
055 Ω @ VGS = 4.
5 V.
Fast switching speed.
Low gate charge (typical 5 nC).
High performance trench technology for extremely low RDS(ON).
High power and current handling capability.
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D2 D1 D1 D2 5 6 4 3 2 1 S FD 0A 3 69 G1 S2 G2 7 8 SO-8 pin 1 S1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25oC unless otherwise noted FDS6930A 30 ±20 (Note 1a) Units V V A 5.
5 20 Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1) (Note 1a) (Note 1b) (Note 1c) 2 1.
6 1 0.
9 -55 to 150 W W TJ,TSTG RθJA RθJC Operating and Storage Temperature Range °C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 °C/W °C/W © 1998 Fairchild Semiconductor Corporation FDS6930A Rev.
D Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Zero Gate Voltage Drain Current VGS = 0 V, I D = 250 µA ID = 250 µA, Referenced to 25 C VDS = 24 V, VGS = 0 V TJ = 55°C IGSSF IGSSR VGS(th) Gate - Body Leakage, Forward Gate - Body Leakage, Reverse (Note 2) o 30 20 1 10 100 -100 V mV/ oC µA µA nA nA ∆BVDSS/∆TJ IDSS VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID...


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