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MTB050N15BRH8

CYStech
Part Number MTB050N15BRH8
Manufacturer CYStech
Description N-Channel Power MOSFET
Published Mar 17, 2020
Detailed Description CYStech Electronics Corp. Spec. No. : C033H8 Issued Date : 2018.03.09 Revised Date : Page No. : 1/10 N-Channel Enhance...
Datasheet PDF File MTB050N15BRH8 PDF File

MTB050N15BRH8
MTB050N15BRH8

Overview
CYStech Electronics Corp.
Spec.
No.
: C033H8 Issued Date : 2018.
03.
09 Revised Date : Page No.
: 1/10 N-Channel Enhancement Mode Power MOSFET MTB050N15BRH8 Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDSON(TYP) VGS=10V, ID=3.
4A VGS=4.
5V, ID=3.
3A 150V 16A 4.
2A 45mΩ 50mΩ Symbol MTB050N15BRH8 G：Gate D：Drain S：Source Outline Pin 1 S S S G DFN5×6 D D D D G S S S D D D D Pin 1 Ordering Information Device MTB050N15BRH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTB050N15BRH8 CYStek Product Specification CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V Continuous Drain Current @ TC=100°C, VGS=10V Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=70°C, VGS=10V Continuous Drain Current @ TA=85°C, VGS=10V Pulsed Drain Current Avalanche Current @ L=0.
1mH Avalanche Energy @ L=1mH, ID=16A, VDD=50V Repetitive Avalanche Energy @ L=0.
05mH TC=25℃ TC=100℃ Total Power Dissipation TA=25°C TA=70°C TA=85°C (Note 1) (Note 1) (Note 2) (Note 2) (Note 2) (Note 3) (Note 3) (Note 4) (Note 3) (Note 1) (Note 1) (Note 2) (Note 2) (Note 2) Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDSM IDM IAS EAS EAR PD PDSM Tj, Tstg Spec.
No.
: C033H8 Issued Date : 2018.
03.
09 Revised Date : Page No.
: 2/10 10s Steady State 150 ±20 16 10 6.
4 4.
2 5.
1 3.
4 4.
6 3.
0 64 *1 36 128 5 *2 36 14.
4 5.
7 2.
5 4.
0 1.
8 3.
6 1.
6 -55~+150 Unit V A mJ W °C Thermal Data Parameter Thermal Resistance, Junction-to-ambient (Note 2) Ther...


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