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MTB050N15BRV8

CYStech
Part Number MTB050N15BRV8
Manufacturer CYStech
Description N-Channel Enhancement Mode Power MOSFET
Published Apr 17, 2020
Detailed Description CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB050N15BRV8 Spec. No. : C033V8 Issued Date : 2017.0...
Datasheet PDF File MTB050N15BRV8 PDF File

MTB050N15BRV8
MTB050N15BRV8


Overview
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET MTB050N15BRV8 Spec.
No.
: C033V8 Issued Date : 2017.
08.
21 Revised Date : 2020.
02.
25 Page No.
: 1/9 Features  Single Drive Requirement  Low On-resistance  Fast Switching Characteristic  Pb-free lead plating and halogen-free package BVDSS ID @ TC=25°C, VGS=10V ID @ TA=25°C, VGS=10V VGS=10V, ID=3.
4A RDSON(TYP) VGS=4.
5V, ID=3.
3A 150V 12.
4A 4.
3A 47.
5mΩ 53mΩ Equivalent Circuit MTB050N15BRV8 Outline Pin 1 DFN3×3 G:Gate D:Drain S:Source Ordering Information Device MTB050N15BRV8-0-T6-G Package Shipping DFN3×3 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTB050N15BRV8 CYStek Product Specification CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25C, unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TC=25C Continuous Drain Current @ VGS=10V, TC=100C Continuous Drain Current @ VGS=10V, TA=25C Continuous Drain Current @ VGS=10V, TA=70C Pulsed Drain Current Avalanche Current @ L=0.
1mH Avalanche Energy @ L=1mH, ID=16A, VDD=25V TC=25℃ Total Power Dissipation TC=100℃ TA=25℃ TA=70℃ Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDSM IDM IAS EAS PD PDSM Tj, Tstg Spec.
No.
: C033V8 Issued Date : 2017.
08.
21 Revised Date : 2020.
02.
25 Page No.
: 2/9 Limits 150 ±20 12.
4 7.
8 4.
3 3.
4 50 *1 36 128 21 8.
4 2.
5 *2 1.
6 *2 -55~+150 Unit V A mJ W C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max RθJC RθJA 6 50 *2 C/W Note : 1.
Pulse width limited by maximum junction temperature.
2.
Surface mounted on a 1 in²pad of 2oz copper, t≤10s.
In practice RθJA will be determined by c...



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