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AOTF8N80

Alpha & Omega Semiconductors
Part Number AOTF8N80
Manufacturer Alpha & Omega Semiconductors
Description 7.4A N-Channel MOSFET
Published Mar 25, 2020
Detailed Description AOT8N80L/AOTF8N80 800V, 7.4A N-Channel MOSFET General Description Product Summary The AOT8N80L & AOTF8N80 have been f...
Datasheet PDF File AOTF8N80 PDF File

AOTF8N80
AOTF8N80

Overview
AOT8N80L/AOTF8N80 800V, 7.
4A N-Channel MOSFET General Description Product Summary The AOT8N80L & AOTF8N80 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested 900V@150℃ 7.
4A < 1.
63Ω TO-220 D Top View TO-220F D AOT8N80L S D G AOTF8N80 S GD G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25oC PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature.
AOT8N80L 800 ±30 7.
4 4.
6 26 3.
8 217 433 5 245 2.
0 -55 to 150 AOTF8N80 7.
4* 4.
6* 50 0.
4 300 AOT8N80L 65 0.
5 0.
51 AOTF8N80 65 -2.
5 S Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Rev1.
0: Sepetember 2017 www.
aosmd.
com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C ID=250µA, VGS=0V 800 900 0.
86 V V/ oC IDSS Zero Gate Voltage Drain Current VDS=800V, VGS=0V VDS=640V, TJ=125°C IGSS Gate-Body leakage current...


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