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AOTF8N60

Alpha & Omega Semiconductors
Part Number AOTF8N60
Manufacturer Alpha & Omega Semiconductors
Description 8A N-Channel MOSFET
Published May 12, 2009
Detailed Description AOT8N60 www.datasheet4u.com / AOTF8N60 600V, 8A N-Channel MOSFET formerly engineering part number AOT9606/AOTF9606 Gen...
Datasheet PDF File AOTF8N60 PDF File

AOTF8N60
AOTF8N60


Overview
AOT8N60 www.
datasheet4u.
com / AOTF8N60 600V, 8A N-Channel MOSFET formerly engineering part number AOT9606/AOTF9606 General Description The AOT8N60 & AOTF8N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
Features VDS (V) = 700V @ 150°C ID = 8A RDS(ON) < 0.
9 Ω (VGS = 10V) 100% UIS Tested! 100% R g Tested! C iss , C oss , C rss Tested! TO-220 Top View TO-220F D G G D G S D S S Absolute Maximum Ratings TA=25°C unless otherwise noted AOT8N60 Parameter Symbol AOTF8N60 V Drain-Source Voltage 600 DS VGS Gate-Source Voltage ±30 Continuous Drain B Current Pulsed Drain Current Avalanche Current C C Units V V A A mJ mJ V/ns W W/ C °C °C o TC=25°C TC=100°C ID IDM IAR EAR G 8 5 32 3.
2 150 300 5 147 1.
17 -50 to 150 300 AOT8N60 65 0.
5 0.
85 8* 5* Repetitive avalanche energy C Single pulsed avalanche energy Peak diode recovery dv/dt TC=25°C B o Power Dissipation Derate above 25 C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A A EAS dv/dt PD TJ, TSTG TL Symbol RθJA RθCS 50 0.
4 AOTF8N60 65 2.
5 Units °C/W °C/W °C/W Maximum Case-to-Sink D,F RθJC Maximum Junction-to-Case * Drain current limited by maximum junction temperature.
Alpha & Omega Semiconductor, Ltd.
www.
aosmd.
com AOT8N60/AOTF8N60 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol STATIC PARAMETERS www.
datasheet4u.
com Parameter Conditions ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C ID=250µA, VGS=0V VDS=600V, VGS=0V VDS=480V, TJ=125°C VDS=0V, VGS=±30V VDS=VGS, ID=250µA VGS=10V, ID=4A VDS=40V, ID=4A Min 600 Typ Max Units V BVDSS Drain-Source Breakdown Volta...



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