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FGD3040G2-F085C

ON Semiconductor
Part Number FGD3040G2-F085C
Manufacturer ON Semiconductor
Description N-Channel IGBT
Published Apr 1, 2020
Detailed Description FGD3040G2-F085C FGB3040G2-F085C EcoSPARK) 2 Ignition IGBT 300 mJ, 400 V, N−Channel Ignition IGBT Features • SCIS Energ...
Datasheet PDF File FGD3040G2-F085C PDF File

FGD3040G2-F085C
FGD3040G2-F085C


Overview
FGD3040G2-F085C FGB3040G2-F085C EcoSPARK) 2 Ignition IGBT 300 mJ, 400 V, N−Channel Ignition IGBT Features • SCIS Energy = 300 mJ at TJ = 25°C • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Applications • Automotive Ignition Coil Driver Circuits • High Current Ignition System • Coil on Plug Application MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Parameter Value Unit BVCER Collector to Emitter Breakdown Voltage (IC = 1 mA) 400 V BVECS Emitter to Collector Voltage − Reverse Battery Condition (IC = 10 mA) 28 V ESCIS25 ESCIS150 IC25 IC110 VGEM PD TJ, TSTG ISCIS = 14.
2 A, L = 3.
0 mHy, RGE = 1 KW, TC = 25°C (Note 1) ISCIS = 10.
8 A, L = 3.
0 mHy, RGE = 1 KW, TC = 150°C (Note 2) Collector Current Continuous at VGE = 5.
0 V, TC = 25°C Collector Current Continuous at VGE = 5.
0 V, TC = 110°C Gate to Emitter Voltage Continuous Power Dissipation Total, TC = 25°C Power Dissipation Derating, TC > 25°C Operating Junction and Storage Temperature 300 170 41 25.
6 ±10 150 1 −55 to +175 mJ mJ A A V W W/°C °C TL Lead Temperature for Soldering Purposes (1/8” from case for 10 s) 300 °C TPKG Reflow Soldering according to JESD020C 260 °C ESD HBM−Electrostatic Discharge Voltage at 100 pF, 1500 W 4 kV CDM−Electrostatic Discharge Voltage at 1 W 2 kV Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1.
Self clamped inductive Switching Energy (ESCIS25) of 300 mJ is based on the test conditions that is starting TJ = 25°C, L = 3 mHy, ISCIS = 14.
2 A, VCC = 100 V during inductor charging and VCC = 0 V during time in clamp.
2.
Self Clamped inductive Switching Energy (ESCIS150) of 170 mJ is based on the test conditions that is starting TJ = 150°C, L = 3mHy, ISCIS = 10.
8 A, VCC = 100 V during inductor charging and VCC = 0 V during time ...


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