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FGD3040G2-F085V

ON Semiconductor
Part Number FGD3040G2-F085V
Manufacturer ON Semiconductor
Description N-Channel IGBT
Published Apr 1, 2020
Detailed Description FGD3040G2-F085V EcoSPARK) 2 Ignition IGBT 300 mJ, 400 V, N−Channel Ignition IGBT Features • SCIS Energy = 300 mJ at TJ...
Datasheet PDF File FGD3040G2-F085V PDF File

FGD3040G2-F085V
FGD3040G2-F085V

Overview
FGD3040G2-F085V EcoSPARK) 2 Ignition IGBT 300 mJ, 400 V, N−Channel Ignition IGBT Features • SCIS Energy = 300 mJ at TJ = 25°C • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • RoHS Compliant Applications • Automotive Ignition Coil Driver Circuits • Coil on Plug Application MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Symbol Parameter Value Units BVCER BVECS ESCIS25 Collector to Emitter Breakdown Voltage (IC = 1 mA) Emitter to Collector Voltage − Reverse Battery Condition (IC = 10 mA) Self Clamping Inductive Switching Energy (Note 1) 400 28 300 V V mJ ESCIS150 Self Clamping Inductive Switching Energy (Note 2) 170 mJ IC25 IC110 VGEM Collector Current Continuous at VGE = 5.
0 V, TC = 25°C Collector Current Continuous at VGE = 5.
0 V, TC = 110°C Gate to Emitter Voltage Continuous 41 A 25.
6 A ±10 V PD Power Dissipation Total, TC = 25°C Power Dissipation Derating, TC > 25°C TJ Operating Junction and Storage Temperature 150 1 −55 to 175 W W/°C °C TSTG TL Storage Junction Temperature Range Max.
Lead Temperature for Soldering (Package Body for 10 s) −55 to 175 300 °C °C TPKG Max.
Lead Temperature for Soldering (Package Body for 10 s) 260 °C ESD HBM − Electrostatic Discharge Voltage at 100 pF, 1500 W 4 kV CDM − Electrostatic Discharge Voltage at 1 W 2 kV Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1.
Self clamped inductive Switching Energy (ESCIS25) of 300 mJ is based on the test conditions that is starting TJ = 25°C, L = 3 mHy, ISCIS = 14.
2 A, VCC = 100 V during inductor charging and VCC = 0 V during time in clamp.
2.
Self Clamped inductive Switching Energy (ESCIS150) of 170 mJ is based on the test conditions that is starting TJ = 150°C, L = 3mHy, ISCIS = 10.
8 A, VCC = 100 V during inductor charging and VCC = 0 V during time in clamp.
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