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HGTG18N120BN

ON Semiconductor
Part Number HGTG18N120BN
Manufacturer ON Semiconductor
Description NPN IGBT
Published Apr 1, 2020
Detailed Description IGBT - NPT 1200 V HGTG18N120BN Description HGTG18N120BN is based on Non− Punch Through (NPT) IGBT designs. The IGBT is i...
Datasheet PDF File HGTG18N120BN PDF File

HGTG18N120BN
HGTG18N120BN

Overview
IGBT - NPT 1200 V HGTG18N120BN Description HGTG18N120BN is based on Non− Punch Through (NPT) IGBT designs.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.
Features • 26 A, 1200 V, TC = 110°C • Low Saturation Voltage: VCE(sat) = 2.
45 V @ IC = 18 A • Typical Fall Time .
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140 ns at TJ = 150°C • Short Circuit Rating • Low Conduction Loss • This Device is Pb−Free www.
onsemi.
com C G E E C G TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K G18N120BN © Semiconductor Components Industries, LLC, 2001 February, 2020 − Rev.
3 $Y &Z &3 &K G18N120BN = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet.
1 Publication Order Number: HGTG18N120BN/D HGTG18N120BN ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Description Ratings Unit BVCES Collector to Emitter Voltage 1200 V IC Collector Current Continuous TC = 25°C 54 A TC = 110°C 26 A ICM Collector Current Pulsed (Note 1) TC = 25°C 160 A VGES Gate to Emitter Voltage Continuous ±20 V VGEM Gate to Emitter Voltage Pulsed ±30 V SSOA Switching Safe Operating Area at TJ = 150°C (Figure 2) 100 A at 1200 V PD Power Dissipation Total TC = 25°C 390 W Power Dissipation Derating TC > 25°C 3.
12 W/°C EAV Forward Voltage Avalanche Energy (Note 2) 125 mJ TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C TL Maximum Lead Temp.
for Soldering 260 °C TSC Short Circuit Withstand Time (Note 3) VGE = 15 V 8 ms Short Circuit Withstand Time (Note 3) VGE = 12 V 15 ms Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and...


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