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HGTG18N120BND

ON Semiconductor
Part Number HGTG18N120BND
Manufacturer ON Semiconductor
Description IGBT
Published Oct 2, 2022
Detailed Description IGBT - NPT 1200 V HGTG18N120BND Description HGTG18N120BND is based on Non− Punch Through (NPT) IGBT designs. The IGBT is...
Datasheet PDF File HGTG18N120BND PDF File

HGTG18N120BND
HGTG18N120BND

Overview
IGBT - NPT 1200 V HGTG18N120BND Description HGTG18N120BND is based on Non− Punch Through (NPT) IGBT designs.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.
Features • 26 A, 1200 V, TC = 110°C • Low Saturation Voltage: VCE(sat) = 2.
45 V @ IC = 18 A • Typical Fall Time .
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140 ns at TJ = 150°C • Short Circuit Rating • Low Conduction Loss • This Device is Pb−Free www.
onsemi.
com C G E E C G TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K 18N120BND © Semiconductor Components Industries, LLC, 2001 February, 2020 − Rev.
3 $Y &Z &3 &K 18N120BND = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet.
1 Publication Order Number: HGTG18N120BND/D HGTG18N120BND ABSOLUTE MAXI...


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