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STGWA30H65FB

STMicroelectronics
Part Number STGWA30H65FB
Manufacturer STMicroelectronics
Description IGBT
Published Apr 15, 2020
Detailed Description STGWA30H65FB Trench gate field-stop IGBT, HB series 650 V, 30 A high-speed in a TO-247 long leads package Datasheet - p...
Datasheet PDF File STGWA30H65FB PDF File

STGWA30H65FB
STGWA30H65FB

Overview
STGWA30H65FB Trench gate field-stop IGBT, HB series 650 V, 30 A high-speed in a TO-247 long leads package Datasheet - production data Figure 1: Internal schematic diagram Features  Maximum junction temperature: TJ = 175 °C  High-speed switching series  Minimized tail current  VCE(sat) = 1.
55 V(typ) @ IC = 30 A  Safe paralleling  Tight parameter distribution  Low thermal resistance Applications  Photovoltaic inverters  High-frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.
The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to m...


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