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BC817-16

SeCoS
Part Number BC817-16
Manufacturer SeCoS
Description NPN Plastic Encapsulate Transistors
Published Apr 17, 2020
Detailed Description Elektronische Bauelemente BC817 -16, -25, -40 500 mA, 50 V NPN Plastic Encapsulate Transistors RoHS Compliant Product ...
Datasheet PDF File BC817-16 PDF File

BC817-16
BC817-16


Overview
Elektronische Bauelemente BC817 -16, -25, -40 500 mA, 50 V NPN Plastic Encapsulate Transistors RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP) Collector 3 1 Base 2 Emitter K F SOT-23 A L 3 Top View 1 E 2 CB 1 D GH 3 2 J REF.
A B C D E F Millimeter Min.
Max.
2.
70 3.
04 2.
10 2.
80 1.
20 1.
60 0.
89 1.
40 1.
78 2.
04 0.
30 0.
50 REF.
G H J K L Millimeter Min.
Max.
- 0.
18 0.
40 0.
60 0.
08 0.
20 0.
6 REF.
0.
85 1.
15 ABSOLUTE MAXIMUM RATINGS at TA = 25°C PARAMETER SYMBOL Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction & Storage Temperature VCBO VCEO VEBO IC PC TJ, TSTG RATINGS 50 45 5 500 300 150, -55 ~ +150 UNIT V V V mA mW °C CHARACTERISTICS at TA = 25°C PARAMETER SYMBOL Collector-base Breakdown Voltage Collector-emitter Breakdown Voltage Emitter-base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain DC Current Gain Collector-emitter Saturation Voltage Base-emitter Saturation Voltage Base-emitter Voltage Collector Capacitance VCBO VCEO VEBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) VBE Cob Transition Frequency fT MIN.
50 45 5 100 40 - 100 TYP.
10 - MAX.
0.
1 0.
1 600 0.
7 1.
2 1.
2 - - UNIT TEST CONDITIONS V IC = 10 µA, IE = 0 V IC = 10 mA, IB = 0 V IE = 1 µA, IC = 0 µA VCB = 45V, IE = 0 µA VEB = 4V, IC = 0 VCE = 1 V, IC = 100 mA VCE = 1 V, IC = 500 mA V IC = 500mA, IB = 50 mA V IC = 500mA, IB = 50 mA V VCE = 1V, IC = 500mA pF MHz VCB = 10V, f=1MHz VCE = 5 V, IC = 10 mA, f = 100MHz CLASSIFICATION OF hFE(1) Rank Range Marking BC817-16 100 - 250 6A BC817-25 160 - 400 6B BC817-40 250 - 600 6C 16-Nov-2009 Rev.
D Page 1 of 2 Elektronische Bauelemente CHARACTERISTIC CURVES BC817 -16, -25, -40 500 mA, 50 V NPN Plastic Encapsulate Transistor...


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