DatasheetsPDF.com

BC817-16

RECTRON
Part Number BC817-16
Manufacturer RECTRON
Description NPN Transistor
Published Dec 1, 2015
Detailed Description SOT-23 BIPOLAR TRANSISTORS TRANSISTOR (NPN) BC817-16 BC817-25 BC817-40 FEATURES * For general AF applications * High c...
Datasheet PDF File BC817-16 PDF File

BC817-16
BC817-16

Overview
SOT-23 BIPOLAR TRANSISTORS TRANSISTOR (NPN) BC817-16 BC817-25 BC817-40 FEATURES * For general AF applications * High collector current * High current gain * Low collector-emitter saturation voltage SOT-23 MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.
008 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25OC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
COLLECTOR 3 BASE 1 2 EMITTER 0.
006(0.
15) 0.
003(0.
08) 0.
055(1.
40) 0.
047(1.
20) 0.
020(0.
50) 0.
012(0.
30) 0.
043(1.
10) 0.
035(0.
90) 0.
004(0.
10) 0.
000(0.
00) 0.
020(0.
50) 0.
012(0.
30) 0.
100(2.
55) 0.
089(2.
25) 0.
019(2.
00) 0.
071(1.
80) 1 3 2 0.
118(3.
00) 0.
110(2.
80) Dimensions in inches and (millimeters) MAXIMUM RATINGS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Collector-base voltage Collector-emitter voltage SYMBOL VCBO VCEO VALUE 50 45 UNITS V V Emitter-base voltage Collector current-continuous Collector dissipation VEBO IC PC 5V 0.
5 A 0.
3 W Junction and storage temperature TJ,Tstg ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS SYMBOL -55 -150 oC BC817-16 BC817-25 BC817-40 BC817-16 BC817-25 BC817-40 UNITS MIN.
MAX.
Collector-base breakdown voltage (IC= 10mA, IE=0) VCBO 50 -V Collector-emitter breakdown voltage (IC= 10mA, IB=0) VCEO 45 -V Emitter-base breakdown voltage (IE= 1mA, IC=0) Collector cut-off current (VCB= 45V, IE=0) VEBO ICBO 5 - -V 0.
1 mA Emitter cut-off current (VEB= 4V, IC=0) DC current gain (VCE= 1V, IC= 100mA) IEBO hFE(1) 100 160 250 0.
1 mA 250 400 600 - Collector-emitter saturation voltage (IC= 500mA, IB= 50mA) Base-emitter saturation voltage (IC= 500mA, IB= 50mA) VCE(sat) VBE(sat) - 0.
7 V 1.
2 V Base-emitter voltage (VCE= 1V, IC= 500mA) Collector capactiance (VCB=10V, f = 1MHz) Tr...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)