DatasheetsPDF.com

4N100-FCQ

UTC
Part Number 4N100-FCQ
Manufacturer UTC
Description N-CHANNEL MOSFET
Published Apr 22, 2020
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 4N100-FCQ Preliminary 4A, 1000V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 4N100...
Datasheet PDF File 4N100-FCQ PDF File

4N100-FCQ
4N100-FCQ

Overview
UNISONIC TECHNOLOGIES CO.
, LTD 4N100-FCQ Preliminary 4A, 1000V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 4N100-FCQ provide excellent RDS(ON), low gate charge and operation with low gate voltages.
This device is suitable for use as a load switch or in PWM applications.
 FEATURES * RDS(ON) ≤ 6.
7 Ω @ VGS=10V, ID=1.
0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL 2.
Drain TO-220F 1 1 TO-251 Power MOSFET 1 TO-220F1 TO-220F2 1 TO-252 1.
Gate 3.
Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 4N100L-TF1-T 4N100G-TF1-T 4N100L-TF2-T 4N100G-TF2-T 4N100L-TF3-T 4N100G-TF3-T 4N100L-TM3-T 4N100G-TM3-T 4N100L-TN3-R 4N100G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-220F2 TO-220F TO-251 TO-252 Pin Assignment 123 GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tape Reel 4N100G-TF1-T (1)Packing Type (2)Package Type (3)Green Package (1) T: Tube, R: Tape Reel (2) TF3: TO-220F, TF1: TO-220F1, TF2: TO-220F2 TM3: TO-251, TN3: TO-252 (3) G: Halogen Free and Lead Free, L: Lead Free  MARKING Lot Code UTC 4 N100 1 L: Lead Free G: Halogen Free Date Code www.
unisonic.
com.
tw Copyright © 2020 Unisonic Technologies Co.
, Ltd 1 of 6 QW-R205-618.
b 4N100-FCQ Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 2) Avalanche Energy (Note 3) Single Pulsed Peak Diode Recovery dv/dt (Note 4) VDSS VGSS ID IDM EAS dv/dt 1000 ±30 4 8 126 2.
7 V V A A mJ V/ns TO-220F/TO-220F1 Power Dissipation (TA=25°С) TO-220F2 PD 20 W TO-251/TO-252 45 W Junction Temperature Storage Temperature TJ TSTG +150 -55 ~ +150 °С °С Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functiona...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)