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4N100-FC

UTC

N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 4N100-FC 4.0A, 1000V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N100-FC provide exc...



4N100-FC

UTC


Octopart Stock #: O-1517617

Findchips Stock #: 1517617-F

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Description
UNISONIC TECHNOLOGIES CO., LTD 4N100-FC 4.0A, 1000V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. 1 TO-220 Power MOSFET 1 TO-220F  FEATURES0 * RDS(ON) ≤ 6.0 Ω @ VGS=10V, ID=2.0A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness 1 1 TO-220F1 TO-220F2  SYMBOL  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 4N100L-TA3-T 4N100G-TA3-T 4N100L-TF1-T 4N100G-TF1-T 4N100L-TF2-T 4N100G-TF2-T 4N100L-TF3-T 4N100G-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F2 TO-220F Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tube Tube www.unisonic.com.tw Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 9 QW-R205-617.C 4N100-FC  MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 9 QW-R205-617.C 4N100-FC Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed (Note 2) Avalanche Energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) VDSS VGSS ID IDM EAS dv/dt 1000 ±30 4 8 144 2.7 V V A A mJ V/ns TO-220 Power Dissipation TO-220F/TO-220F1 PD TO-220F2 120 W...




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