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4N100-FC

UTC
Part Number 4N100-FC
Manufacturer UTC
Description N-CHANNEL POWER MOSFET
Published Sep 5, 2023
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 4N100-FC 4.0A, 1000V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N100-FC provide exc...
Datasheet PDF File 4N100-FC PDF File

4N100-FC
4N100-FC


Overview
UNISONIC TECHNOLOGIES CO.
, LTD 4N100-FC 4.
0A, 1000V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages.
This device is suitable for use as a load switch or in PWM applications.
1 TO-220 Power MOSFET 1 TO-220F  FEATURES0 * RDS(ON) ≤ 6.
0 Ω @ VGS=10V, ID=2.
0A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness 1 1 TO-220F1 TO-220F2  SYMBOL  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 4N100L-TA3-T 4N100G-TA3-T 4N100L-TF1-T 4N100G-TF1-T 4N100L-TF2-T 4N100G-TF2-T 4N100L-TF3-T 4N100G-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F2 TO-220F Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tube Tube www.
unisonic.
com.
tw Copyright © 2023 Unisonic Technologies Co.
, Ltd 1 of 9 QW-R205-617.
C 4N100-FC  MARKING Power MOSFET UNISONIC TECHNOLOGIES CO.
, LTD www.
unisonic.
com.
tw 2 of 9 QW-R205-617.
C 4N100-FC Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed (Note 2) Avalanche Energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) VDSS VGSS ID IDM EAS dv/dt 1000 ±30 4 8 144 2.
7 V V A A mJ V/ns TO-220 Power Dissipation TO-220F/TO-220F1 PD TO-220F2 120 W 23 W Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Repetitive Rating: Pulse width limited by maximum junction temperature.
3.
L=30mH, IAS=3.
1A, VDD=100V, RG=25Ω, Starting TJ = 25°C 4.
ISD≤4.
0A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C  THERMAL D...


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