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R6002END3

ROHM
Part Number R6002END3
Manufacturer ROHM
Description Power MOSFET
Published Apr 30, 2020
Detailed Description R6002END3 　　Nch 600V 2A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 3.4Ω ±1.7A 26W lFeatures 1) Low on-resistance 2) F...
Datasheet PDF File R6002END3 PDF File

R6002END3
R6002END3

Overview
R6002END3 　　Nch 600V 2A Power MOSFET VDSS RDS(on)(Max.
) ID PD 600V 3.
4Ω ±1.
7A 26W lFeatures 1) Low on-resistance 2) Fast switching 4) Drive circuits can be simple 5) Parallel use is easy 6) Pb-free plating ; RoHS compliant lOutline TO-252 　 　 　 　 　　　　　　 lInner circuit 　　 Datasheet 　 lApplication Switching Power Supply lPackaging specifications Packing Embossed Tape Packing code TL1 Marking R6002E Basic ordering unit (pcs) 2500 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current (Tc = 25°C) Pulsed drain current VDSS ID*1 IDP*2 600 V ±1.
7 A ±4 A Gate - Source voltage static AC(f>1Hz) VGSS ±20 V ±30 V Avalanche current, single pulse IAS*3 0.
3 A Avalanche energy, single pulse EAS*3 6 mJ Power dissipation (Tc = 25°C) PD 26 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.
rohm.
com © 2017 ROHM Co.
, Ltd.
All rights reserved.
1/12 20170929 - Rev.
001 　 　 R6002END3 　 　 　 　　 　 lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s 　 　 　 　 　 　 　 　 Datasheet 　 　 　　　　　　　　　　　　　　　　 Symbol RthJC*4 RthJA Tsold Values Unit Min.
Typ.
Max.
- - 4.
9 ℃/W - - 147 ℃/W - - 265 ℃ lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage Static drain - source on - state resistance Gate resistance V(BR)DSS VGS = 0V, ID = 1mA VDS = 600V, VGS = 0V IDSS Tj = 25°C Tj = 125°C IGSS VGS = ±20V, VDS = 0V VGS(th) VDS = 10V, ID = 1mA VGS = 10V, ID = 0.
5A RDS(on)*5 Tj = 25°C Tj = 125°C RG f = 1MHz, open drain Values Unit Min.
Typ.
Max.
600 - - V 　　　 - - 100 μA - - 1000 - - ±100 nA 2 - 4V 　　　 - 2.
8 3.
4...


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