DatasheetsPDF.com

AOTF2916L

INCHANGE
Part Number AOTF2916L
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 5, 2020
Detailed Description isc N-Channel MOSFET Transistor AOTF2916L ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 34mΩ@10V ·Fast Switching S...
Datasheet PDF File AOTF2916L PDF File

AOTF2916L
AOTF2916L

Overview
isc N-Channel MOSFET Transistor AOTF2916L ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 34mΩ@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High fast switching Power Supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 17 IDM Drain Current-Single Pulsed 50 PD Total Dissipation @TC=25℃ 23.
5 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 6.
38 UNIT ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 250μA VGS(th) Gate Thres...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)