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SI2302A

MCC
Part Number SI2302A
Manufacturer MCC
Description N-Channel MOSFET
Published May 14, 2020
Detailed Description MCC R Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !...
Datasheet PDF File SI2302A PDF File

SI2302A
SI2302A

Overview
MCC R Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# SI2302A Features • Halogen free available upon request by adding suffix "-HF" • 20V,3.
0A, RDS(ON)=55m¡@VGS=4.
5V RDS(ON)=82m¡@VGS=2.
5V • High dense cell design for extremely low RDS(ON) • Rugged and reliable • Lead free product is acquired • SOT-23 Package • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 Maximum Ratings @ 25OC Unless Otherwise Specified Symbol VDS ID IDM VGS PD R©JA TJ TSTG Parameter Drain-source Voltage Drain Current-Continuous Drain Current-Pulsed a Gate-source Voltage Total Power Dissipation Thermal Resistance Junction to Ambientb Operating Junction Temperature Storage Temperature Rating 20 3 10 ±8 1.
25 100 -55 to +150 -55 to +150 Internal Block Diagram D G S Unit V A A V W к/W к к N-Channel Enhancement Mode Field Effect Transistor SOT-23 A D 3 1.
GATE CB 2.
SOURCE 3.
DRAIN 12 FE G HJ K DIMENSIONS INCHES DIM MIN MAX A .
110 .
120 B .
083 .
104 C .
047 .
055 D .
035 .
041 E .
070 .
081 F .
018 .
024 G .
0005 .
0039 H .
035 .
044 J .
003 .
007 K .
015 .
020 MM MIN 2.
80 2.
10 1.
20 .
89 1.
78 .
45 .
013 .
89 .
085 .
37 MAX 3.
04 2.
64 1.
40 1.
03 2.
05 .
60 .
100 1.
12 .
180 .
51 NOTE Suggested Solder Pad Layout .
031 .
800 .
035 .
900 .
079 2.
000 inches mm .
037 .
950 .
037 .
950 Revision: A www.
mccsemi.
com 1 of 5 2017/04/29 MCC R Micro Commercial Components Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 10µA VDS = 20V, VGS = 0V VGS = 8V, VDS = 0V VGS = -8V, VDS = 0V 20 1 100 -100 V µA nA nA Gate Threshold Voltage Static Drain-Source On-Resistance Forwand Transconductance Dynamic Characteristic...


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